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L8550SQLT1G Datasheet(PDF) 2 Page - Leshan Radio Company |
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L8550SQLT1G Datasheet(HTML) 2 Page - Leshan Radio Company |
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2 / 5 page ![]() L8550SQLT1G/S-L8550SQLT1G General Purpose Transistors PNP Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC =-1.0mA) Emitter-Base Breakdown Voltage (IE = -100µA) Collector-Base Breakdown voltage (IC = -100µA) Collector Cutoff Current (VCB = -35 V) Emitter Cutoff Current (VEB = -4V) ON CHARACTERISTICS DC Current Gain (IC =-100mA, VCE =-1V) Collector-Emitter Saturation Voltage (IC =-800mA, IB =-80mA) Symbol Min. Typ. ICBO nA - - -150 V(BR)EBO Vdc -12 - -40 - V(BR)CBO Vdc - - HFE 150 - 300 VCE(S) IEBO nA - - -150 Vdc - - -0.5 Unit V(BR)CEO Vdc -25 - - Max. Leshan Radio Company, LTD. Rev.O Oct 2016 2/5 |
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