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ACE7403B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7403B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE7403B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACE7403B uses advanced trench technology and desgin to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS= 30V, ID= 50A RDS(ON)1@VGS= 10V, IDS=25A,TYP 8mΩ RDS(ON)2@VGS= 5V, IDS=20A,TYP 10mΩ Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GSS ±20 V Drain Current (Continuous) *AC TA=25°C I D 50 A TA=100°C 35 Drain Current (Pulse) *B I DM 140 A Power Dissipation TA=25°C P D 60 W Operating Temperature/ Storage Temperature T J//TSTG -55~175 OC Packaging Type TO-252 Ordering information ACE7403BXX + H Halogen - free Pb - free YM：TO-252 |
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