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LDTC124GET3G Datasheet(PDF) 1 Page - Leshan Radio Company |
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LDTC124GET3G Datasheet(HTML) 1 Page - Leshan Radio Company |
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1 / 3 page  3 COLLECTOR 2 EMITTER 1 BASE R2 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping N9 3000/Tape & Reel LESHAN RADIO COMPANY, LTD. 1/3 • 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. LDTC124GET1G 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Inverter, Interface, Driver Features • • Applications LDTC124GET1G LDTC124GET3G N9 22 22 Absolute maximum ratings (Ta=25 °C) Electrical characteristics (Ta=25 °C) 1 2 3 SC-89 Parameter Symbol Min. Typ. Max. Unit Conditions 50 50 5 − 140 − 56 − 15.4 − − − − − − − 250 22 − − − 0.5 260 0.3 − − 28.6 V V V µA µA V − MHz k Ω IC = 50µA IC = 1mA IE = 330µA VCB = 50V VEB = 4V IC = 10mA , IB= 0.5mA IC = 5mA , VCE= 5V VCE = 10V , IE= −5mA , f= 100MHz ∗ − Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Emitter-base resistance ∗ Transition frequency of the device. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R Parameter Symbol Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW C Collector power dissipation Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature C VCBO VCEO VEBO IC |
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