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NTB082N65S3F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # NTB082N65S3F
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

NTB082N65S3F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
NTB082N65S3F
·
DESCRIPTION
·
Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V
·
Drain Source Voltage: VDSS= 650V(Min)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
.
·
Industrial power supplies
·
UPS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-continuous@ TC=25℃
40
A
IDM
Pulse Drain Current
100
A
PD
Total Dissipation@TC=25℃
320
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.39
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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