IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA220N06T3 IXFP220N06T3

IXFH220N06T3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

87

145

S

C

iss

8500

pF

C

oss

V

970

pF

C

rss

50

pF

R

Gi

Gate Input Resistance

1.7



t

d(on)

24

ns

t

r

20

ns

t

d(off)

46

ns

t

f

17

ns

Q

g(on)

136

nC

Q

gs

V

44

nC

Q

gd

30

nC

R

thJC

0.34

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

220

A

I

SM

Repetitive, Pulse Width Limited by T

JM

880

A

V

SD

I

1.4

V

t

rr

38

ns

I

RM

1.9

A

Q

RM

37

nC

2. On through-hole packages, R

or less from the package body.

Resistive Switching Times

V

R

I

-di/dt = 100A/

s

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.