TDA6501 datasheet(21/37 Pages) PHILIPS

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9397 750 15057

Product data sheet

Rev. 02 — 14 June 2005

21 of 37

Philips Semiconductors

TDA6500; TDA6501

5 V mixer/oscillator and synthesizer for PAL and NTSC standards

[1]

Limits are related to the tank circuits used in Figure 7 for a PAL application. The choice of different external components adapts the

measurement circuit to other frequency bands or NTSC applications.

[2]

The frequency shift is deﬁned as a change in oscillator frequency when the supply voltage varies from VCC = 5 V to 4.75 V (4.5 V) or

from VCC = 5 V to 5.25 V (5.5 V). The oscillator is free running during this measurement.

[3]

The frequency drift is deﬁned as a change in oscillator frequency when the ambient temperature varies from Tamb =25 °Cto50 °C or

from Tamb =25 °C to 0 °C. The oscillator is free running during this measurement.

[4]

Switch-on drift is deﬁned as the change in oscillator frequency between 5 s and 15 min after switch on. The oscillator is free running

during this measurement.

[5]

The supply ripple susceptibility is measured in the circuit according to Figure 7 using a spectrum analyzer connected to the IF output. An

unmodulated RF signal is applied to the test board RF input. A sinewave signal with a frequency of 500 kHz is superimposed onto the

supply voltage. The amplitude of this ripple signal is adjusted to bring the 500 kHz sidebands around the IF carrier to a level of

−53.5 dB

with respect to the carrier.

[1]

This is the level of divider interferences close to the IF. For example channel S3: fosc = 158.15 MHz, 1⁄4fosc = 39.5375 MHz. The LOSCIN

input must be left open (i.e. not connected to any load or cable); the HOSCIN1 and HOSCIN2 inputs are connected to a hybrid.

[2]

Crystal oscillator interference means the 4 MHz sidebands caused by the crystal oscillator. The rejection has to be greater than 60 dB

for an IF output signal of 100 dB

µV.

[3]

The reference frequency rejection is the level of reference frequency sidebands (e.g. 62.5 kHz) related to the carrier. The rejection has

to be greater than 60 dB for an IF output signal of 100 dB

µV.

osc

phase noise, carrier-to-noise

sideband

±10 kHz frequency offset; worst

case in the frequency range

dBc/Hz

±100 kHz frequency offset; worst

case in the frequency range

104

107

dBc/Hz

RSCp-p

ripple susceptibility of VCC

(peak-to-peak value)

4.75 V < VCC < 5.25 V; worst case

in the frequency range; ripple

frequency 500 kHz

[5] 15

Table 21:

Oscillator …continued

VCC =5V; Tamb =25 °C; values are given for an IF ampliﬁer with 500 Ω load (measured as shown in Figure 7 for the PAL

standard); unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 22:

IF ampliﬁer

VCC =5V; Tamb =25 °C; values are given for an IF ampliﬁer with 500 Ω load (measured as shown in Figure 7 for the PAL

standard); unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF ampliﬁer

S22

output reﬂection coefﬁcient

magnitude; see Figure 6

-38

phase; see Figure 6

0.36

deg

output impedance (RS +jLSω)RS at 36.15 MHz

Ω

CS at 36.15 MHz

RS at 43.5 MHz

Ω

CS at 43.5 MHz

Rejection at the IF output

INTdiv

level of divider interferences

in the IF signal

worst case

[1] --23

µV

INTXTAL

crystal oscillator interferences

rejection

VIF = 100 dBµV; worst case in the

frequency range

[2] 60

dBc

INTfref

reference frequency rejection

VIF = 100 dBµV; worst case in the

frequency range

[3] 60

dBc

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