IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFP30N25X3M

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

30

A

I

SM

Repetitive, Pulse Width Limited by T

JM

120

A

V

SD

I

1.4

V

t

rr

82

ns

Q

RM

290

nC

I

RM

7

A

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

Note 1

14

23

S

R

Gi

Gate Input Resistance

1.8



C

iss

1450

pF

C

oss

V

266

pF

C

rss

1

pF

C

o(er)

115

pF

C

o(tr)

410

pF

t

d(on)

16

ns

t

r

24

ns

t

d(off)

77

ns

t

f

20

ns

Q

g(on)

21

nC

Q

gs

V

6

nC

Q

gd

6

nC

R

thJC

3.5

C/W

R

thCS

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2 - Drain

3 - Source

1 2 3

OVERMOLDED TO-220

(IXFP...M)

oP