IXKC19N60C5 datasheet(4/4 Pages) IXYS

Part #	IXKC19N60C5

Description	Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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20090209b

IXKC 19N60C5

IXYS reserves the right to change limits, test conditions and dimensions.

Advanced Technical Information

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

-1

-2

-3

-4

-5

-1

-2

t p [s]

540

580

620

660

700

-60

-20

100

140

180

T j [°C]

200

400

600

800

100

140

180

T j [°C]

Ciss

Coss

Crss

050

100

150

200

V DS [V]

120V

40 0V

102030

405060

Q gate [nC]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

-1

00.5

11.5

V SD [V]

25 °C

150 °C

120

V GS [V]

typ

98 %

0.1

0.2

0.3

0.4

-60

-20

100

140

180

T j [°C]

6V 6.5 V

20 V

0.1

0.2

0.3

0.4

0.5

1020

3040

I D [A]

5.5 V

VDS =

TJV = 150°C

ID = 16 A

VGS = 10 V

VDS > 2·RDS(on) max · ID

TJ =

VDS = 120 V

VGS = 0 V

f = 1 MHz

ID = 11 A

ID = 0.25 mA

D = tp/T

ID = 16 A pulsed

Fig. 5 Drain-source on-state resistance

Fig. 4 Typ. drain-source on-state resistance

Fig. 7 Forward characteristic

of reverse diode

Fig. 8

Typ. gate charge

Fig. 10 Avalanche energy

Fig. 11 Drain-source breakdown voltage

Fig. 6 Typ. transfer characteristics

Fig. 9 Typ. capacitances

IXKC19N60C5 Datasheet(PDF) 4 Page - IXYS Corporation

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