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IXTH2N150L Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXTH2N150L
Description  N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH2N150L Datasheet(HTML) 2 Page - IXYS Corporation

  IXTH2N150L Datasheet HTML 1Page - IXYS Corporation IXTH2N150L Datasheet HTML 2Page - IXYS Corporation IXTH2N150L Datasheet HTML 3Page - IXYS Corporation IXTH2N150L Datasheet HTML 4Page - IXYS Corporation IXTH2N150L Datasheet HTML 5Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH2N150L
Note 1. Pulse test, t
 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
2
A
I
SM
Repetitive, Pulse Width Limited by T
JM
8
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.5
V
t
rr
1.86
μs
I
RM
24
A
Q
RM
22
μC
I
F = 2A, -di/dt = 100A/s,
V
R = 100V, VGS = 0V
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 20V, ID = 0.5 • ID25, Note 1
0.4
0.7
S
C
iss
1470
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
92
pF
C
rss
30
pF
t
d(on)
33
ns
t
r
55
ns
t
d(off)
85
ns
t
f
84
ns
Q
g(on)
72
nC
Q
gs
V
GS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
15
nC
Q
gd
30
nC
R
thJC
0.43
C/W
R
thCS
0.21
C/W
Safe Operating Area Specification
Characteristic Values
Symbol
Test Conditions
Min.
Typ.
Max.
SOA
V
DS = 1200V, ID = 0.10A, TC = 75°C, Tp = 5s
120
W
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G =10 (External)
e
P
TO-247 Outline
1
2
3
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC



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