ZXMP6A13G

ISSUE 2 - JULY 2004

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-60

V

I

Zero Gate Voltage Drain Current

I

DSS

-1

AV

Gate-Body Leakage

I

GSS

100

nA

V

20V, V

Gate-Source Threshold Voltage

V

GS(th)

-1.0

V

I

D

=-250 A, V

Static Drain-Source On-State Resistance

(1)

R

DS(on)

0.390

0.595

V

V

Forward Transconductance

(1)(3)

g

fs

1.8

S

V

DYNAMIC

(3)

Input Capacitance

C

iss

233

pF

V

f=1MHz

Output Capacitance

C

oss

17.4

pF

Reverse Transfer Capacitance

C

rss

9.6

pF

SWITCHING

(2) (3)

Turn-On Delay Time

t

d(on)

1.6

ns

V

R

G

6.0

, V

Rise Time

t

r

2.3

ns

Turn-Off Delay Time

t

d(off)

13

ns

Fall Time

t

f

5.8

ns

Gate Charge

Q

g

2.4

nC

V

Total Gate Charge

Q

g

5.1

nC

V

I

Gate-Source Charge

Q

gs

0.7

nC

Gate-Drain Charge

Q

gd

0.7

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

V

SD

-0.85

-0.95

V

T

V

Reverse Recovery Time

(3)

t

rr

22.6

ns

T

di/dt= 100A/ s

Reverse Recovery Charge

(3)

Q

rr

23.2

nC

NOTES

:

(1) Measured under pulsed conditions. Width

300µ s. Duty cycle

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.