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20100906a

MITB15WB1200TMH

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier Bridge D8 - D11

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

RRM

max. repetitive reverse voltage

T

25°C

1600

V

I

FAV

I

DAVM

average forward current

max. average DC output current

sine 180°

T

80°C

3

T

80°C

22

61

A

A

I

FSM

max. forward surge current

t = 10 ms; sine 50 Hz

T

25°C

T

300

tbd

A

A

t = 10 ms; sine 50 Hz

T

25°C

T

450

tbd

P

tot

total power dissipation

T

25°C

50

W

V

F

forward voltage

I

T

25°C

T

1.35

1.35

1.6

V

V

I

R

reverse current

V

T

25°C

T

0.3

0.01

mA

mA

R

thJC

R

thCH

thermal resistance junction to case

thermal resistance case to heatsink

(per diode)

(per diode)

0.7

2.1

K/W

K/W

Temperature Sensor NTC

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

R

25

B

25/50

resistance

T

25°C

4.75

5.0

3375

5.25

k

W

K

Module

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

T

VJ

T

VJM

T

stg

operating temperature

max. virtual junction temperature

storage temperature

-40

-40

125

150

125

°C

°C

°C

V

ISOL

isolation voltage

I

2500

V~

CTI

comparative tracking index

-

F

C

mounting force

40

80

N

d

S

d

A

creep distance on surface

strike distance through air

12.7

12

mm

mm

Weight

35

g

Equivalent Circuits for Simulation

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

0

R

0

rectifier diode

D8 - D13

T

0.9

16

V

m

W

V

0

R

0

IGBT

T1 - T6

T

1.0

67

V

m

W

V

0

R

0

free wheeling diode

D1 - D6

T

1.15

50

V

m

W

V

0

R

0

IGBT

T7

T

1.0

67

V

m

W

V

0

R

0

free wheeling diode

D7

T

1.6

53

V

m

W

I

V

0

R

0

T