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BFG520 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFG520 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN RF Transistor BFG520/X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μ A hFE DC Current Gain IC=20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.3 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 1.0 pF CC Collector capacitance IE=ie=0,VCB=6V,f=1MHz 0.6 pF ︱ S21︱2 Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 17 18 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 IC= 5mA ; VCE= 8V; f= 2GHz 1.9 |
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