Transistors

1

Publication date: March 2003

SJC00064BED

Silicon PNP epitaxial planar type

For low-frequency output amplification

For DC-DC converter

For stroboscope

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Large collector current I

C

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

Note) The part number in the parenthesis shows conventional part number.

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

Q

R

125 to 205

180 to 625

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−27

V

Collector-emitter voltage (Base open)

−18

V

Emitter-base voltage (Collector open)

−7V

Collector current

−5A

Peak collector current

−8A

Collector power dissipation

0.75

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

−18

V

Emitter-base voltage (Collector open)

−7V

Collector-base cutoff current (Emitter open)

= −10 V, I

E

= 0

−100

nA

Emitter-base cutoff current (Collector open)

−1

µA

1, 2

125

625



1

= −3 A, I

B

= − 0.1 A

− 0.4

−1.0

V

Transition frequency

120

MHz

Collector output capacitance

60

pF

(Common base, input open circuited)

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

Unit: mm

1: Emitter

2: Collector

3: Base

TO-92-B1 Package