Transistors

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Publication date: February 2003

SJC00133BED

2SC3526H

Silicon NPN epitaxial planar type

For display video output

■ Features

• High transition frequency f

T

• Small collector output capacitance (Common base, input open cir-

• Wide current range

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

110

V

Collector-emitter voltage

100

V

(Resistor between B and E)

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

3.5

V

Collector current

150

mA

Peak collector current

300

mA

Collector power dissipation

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

110

V

Collector-emitter voltage (Resistor

100

V

between B and E)

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

= 100 µA, I

C

= 0

3.5

V

Collector-emitter cutoff current (Base open)

µA

Forward current transfer ratio

20



Collector-emitter saturation voltage

= 150 mA, I

B

= 15 mA

0.5

V

Transition frequency

300

MHz

350

Collector output capacitance

= 30 V, I

E

= 0, f = 1 MHz

3

pF

(Common base, input open circuited)

■ Electrical Characteristics T

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Emitter

2: Collector

3: Base

EIAJ: SC-51

TO-92L-A1 Package

(1.27)

(1.27)

0.45

+0.2

–0.1

0.45

+0.2

–0.1

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