STPS20H100CF datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

STPS20H100CT/CF/CG/CG-1

4/8

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 7-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

(TO-220AB, D

2PAK, I2PAK).

102030

4050

60708090

100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

IR(µA)

VR(V)

Tj=125°C

Tj=100°C

Tj=25°C

Tj=150°C

Fig. 8: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

200

500

1000

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 9: Junction capacitance versus reverse

voltage applied (typical values, per diode).

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

tp(s)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

Fig. 7-2: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

(ISOWATT220AB, TO-220FPAB).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1.0

10.0

100.0

IFM(A)

Tj=125°C

Typical values

Tj=125°C

Tj=25°C

Tj=150°C

Typical values

VFM(V)

Fig. 10: Forward voltage drop versus forward

current (maximum values, per diode).

S(Cu) (cm²)

Rth(j-a) (°C/W)

Fig. 11: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed circuit

board FR4, copper thickness: 35µm) (D

2PAK).

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