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VUB72 Datasheet(PDF) 2 Page - IXYS Corporation |
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VUB72 Datasheet(HTML) 2 Page - IXYS Corporation |
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2 / 4 page ![]() © 2003 IXYS All rights reserved 2 - 4 VUB 72 Chopper Transistor T Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 1200 V V GES ± 20 V I C25 DC; T C = 25°C 50 A I C80 DC; T C = 80°C 35 A I CM V GE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A V CEK RBSOA; L = 100 µH V CES t SC V GE = ±15 V; VCE = 900 V; TVJ = 125°C 10 µs (SCSOA) R G = 39 Ω; non repetitive Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 25 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V T VJ = 125°C 2.1 V V GE(th) I C = 1 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES; VGE = 0 V; TVJ = 25°C 0.1 mA T VJ = 125°C 0.1 mA I GES V CE = 0 V; VGE = ± 20 V 200 nA t d(on) 80 ns t r 50 ns t d(off) 440 ns t f 50 ns E on 3.8 mJ E off 2.0 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 2.0 nF Q Gon V CE= 600 V; VGE = 15 V; IC = 35 A 150 nC R thJC 0.6 K/W R thJH with heat transfer paste, see mounting instructions 1.2 K/W Inductive load, T VJ = 125°C V CE = 600 V; IC = 25 A V GE = ±15 V; R G = 39 Ω Module Symbol Conditions Maximum Ratings I RMS per pin 100 A T VJ -40...+150 °C T stg -40...+125 °C V ISOL I ISOL ≤ 1 mA; 50/60 Hz; t = 1 min 3600 V~ M d Mounting torque (M5) 2 - 2.5 Nm Symbol Conditions Characteristic Values min. typ. max. d A, dS 5mm Weight 35 g Equivalent Circuits for Simulation Conduction D1 - D6 Diode (typ. at T J = 125°C) V 0 = 0.85 V; R0 = 7 m Ω T/D IGBT (typ. at V GE = 15 V; TJ = 125°C) V 0 = 1.0 V; R0 = 45 m Ω Free Wheeling Diode (typ. at T J = 125°C) V 0 = 1.25 V; R0 = 32 m Ω Dimensions in mm (1 mm = 0.0394") Temperature Sensor NTC Symbol Conditions Characteristic Values typ. R 25 T = 25°C 2.2 k Ω B 25/100 100 K R(T) = R 25 • e B 25/100 11 T 298K () |
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