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November 14, 2014

 

IRGP6640DPbF/IRGP6640D-EPbF

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

0

102030

40

5060

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VCES = 400V

VCES = 300V

0

100

200

300

400

500

600

VCE (V)

1

10

100

1000

10000

Cies

Coes

Cres

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc



J



J



1



1



2



2



3



3

R

1

R

1

R

2

R

2

R

3

R

3



C



C

Ci=

iRi

Ci=

iRi

Ri (°C/W)

i (sec)

0.24105

0.000318

0.30929

0.002839

0.20039

0.017338

Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature

100

125

150

175

Case Temperature (°C)

0

10

20

30

40

50

60

70

D=0.5

D=0.2

D=0.1