ULN2001LC

INEAR INTEGRATED CIRCUIT

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R113-019.D



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

50

V

Clamp Diode Reverse Voltage

50

V

Input Voltage

30

V

Peak Collector Current

100

mA

Output Clamp Current

100

mA

DIP-8

0.750

W

Power Dissipation

SOP-8

0.625

W

Junction Temperature

+125

°C

Storage Temperature

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Output Sustaining Voltage

0

50

V

Output Current

100 mA/ch

Input Voltage

0

12

V

Input Voltage (Output On)

2.8

12

V

Input Voltage (Output Off)

0

0.7

V

Clamp Diode Reverse Voltage

50

V

Clamp Diode Forward Current

70

mA



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

DIP-8

133

°С/W

Junction to Ambient

SOP-8

160

°С/W



PARAMETER

SYMBOL

TEST

CIRCUIT

TEST CONDITIONS

MIN TYP MAX UNIT

1.9

2.3

V

2.0

2.4

V

2.0

2.4

V

Input Voltage (Output On)

2

2.1

2.5

V

0.83

V

0.92

V

0.99

V

3

1.10

V

6.3

mA

2.8

mA

1.97

mA

Input Current

2

0.83

mA

Clamp Diode Forward Voltage

5

1.1

1.4

V

Output Leakage Current

1

50

μA

Collector-Emitter Voltage

1

50

V

Clamp Diode Reverse Voltage

4

50

V

Clamp Diode Reverse Current

4

50

μA

Propagation Delay Time,

Low- to High

6

0.15

1

μs

Propagation Delay Time,

High - to Low

6

0.15

1

μs