TSSD10L100SW - TSSD10L200SW

Taiwan Semiconductor

2

Version:B1704

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-lead thermal resistance

13

°C/W

Junction-to-ambient thermal resistance

59

°C/W

Junction-to-case thermal resistance

15

°C/W

Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage per diode

(1)

TSSD10L100SW

0.56

-

V

0.70

0.80

V

0.51

-

V

0.62

0.71

V

TSSD10L150SW

TSSD10L200SW

0.81

-

V

0.91

1.05

V

0.63

-

V

0.72

0.83

V

Reverse current @ rated

(2)

TSSD10L100SW

-

50

µA

-

20

mA

TSSD10L150SW

TSSD10L200SW

-

20

µA

-

1

mA

Junction capacitance

TSSD10L100SW

540

-

pF

TSSD10L150SW

TSSD10L200SW

325

-

pF

Notes:

1.

Pulse test with PW=0.3 ms

2.

Pulse test with PW=30 ms

ORDERING INFORMATION

PART NO.

PACKING

CODE

PACKING CODE

SUFFIX

PACKAGE

PACKING

TSSD10LxxSW

(Note 1, 2)

RO

G

TO-252 (D-PAK)

2.5KPCS / 13"Reel

Notes:

1.

2.

Whole series with green compound (halogen-free)

EXAMPLE

EXAMPLE P/N

PART NO.

PACKING CODE

PACKING CODE

SUFFIX

DESCRIPTION

TSSD10L100SW

RO

G

Green compound