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VCUT03F1-HD0 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VCUT03F1-HD0 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() VCUT03F1-HD0 www.vishay.com Vishay Semiconductors Rev. 1.0, 16-Feb-18 2 Document Number: 86141 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CUT THE SPIKES WITH VCUT03F1-HD0: The VCUT03F1-HD0 is a bidirectional and symmetrical (BiSy) ESD-protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03F1-HD0 offers a high isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package size of the tiny LLP0603-2L package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 ELECTRICAL CHARACTERISTICS VCUT03F1-HD0 (pin 1 to pin 2 or pin 2 to pin1) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse stand-off voltage Max. reverse working voltage VRWM -- 3.3 V Reverse voltage at IR = 0.1 μA VR 3.3 - - V Reverse current at VRWM = 3.3 V IR -- 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 7-9 V Reverse clamping voltage at IPP = 1 A VC -9 12 V at IPP = IPPM = 4 A - 10.8 14 V Capacitance at VR = 0 V; f = 1 MHz CD -14 16 pF at VR = 2.5 V; f = 1 MHz - 11 - pF 10 100 1000 10000 0 20 40 60 80 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 Axis Title t (ns) 2nd line Rise time = 0.7 ns to 1 ns 53 27 20557 10 100 1000 10000 0 20 40 60 80 100 010 20 30 40 Axis Title t (µs) 2nd line 20 µs to 50 % 8 µs to 100 % 20548 |
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