MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

KBPC50

UNIT

420

08

560

700

840

600

800

1000

1200

06

12

10

600

800

1000

1200

V

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified output current (Fig.1)

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

840

50

450

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µ

A

SYMBOL

KBPC50

UNIT

08

06

12

10

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

Typical junction capacitance per diode

300

1000

1.1

5

pF

voltage per diode

TEST

CONDITIONS

I = 25A

F

T = 25°C

A

4V, 1MHz

T = 150°C

A

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

°

C/W

SYMBOL

KBPC50

UNIT

08

06

12

10

Typical thermal resistance

(1) With heatsink

(1)

1.4

(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with

Notes

M5 screw

PRIMARY CHARACTERRISTICS

50A

600V to 1200V

1.1V

5 µA

150ºC

450A

Storage temperature range

ºC

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