Features

• Ideal for printed circuit board

DB Package

• Not ESD Sensitive

Mechanical Data

Parameter

Symbol

DB155G

DB156G

Unit

Repetitive peak reverse voltage

600

800

V

RMS reverse voltage

420

560

V

DC blocking voltage

600

800

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

DB155G

DB156G

Unit

Maximum average forward

rectified current

1.5

1.5

A

Peak forward surge current

50

50

A

Maximum instantaneous forward

voltage drop

1.1

1.1

5

5

500

500

Rating for fusing

I

10

10

A

Typical junction capacitance

14

14

pF

Typical thermal resistance

36

36

°C/W

DB155G thru DB157G

Conditions

1000

700

DB157G

-55 to 150

Maximum ratings at Tc = 25 °C, unless otherwise specified

Mounting position: Any

Maximum DC reverse current at

rated DC blocking voltage

μA

Single Phase Glass Passivated

Silicon Bridge Rectifier

5

DB157G

1.1

V

Electrical characteristics at Tc = 25 °C, unless otherwise specified

500

t < 8.3 ms

10

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

Polarity: Polarrity symbols marked on the body

• High surge current capability

Case: Molded plastic

36

Terminals: Plated terminals, solderable per MIL-STD-

202, Method 208

1.5

50

-55 to 150

10

• Reliable low cost construction utilizing molded

plastic technique

• Types from 600 V up to 1000 V V

RRM

14

Conditions

1000

• Small size, simple installation

1

Oct. 2018

http://www.diodemodule.com/silicon_products/bridge_rectifiers/db155g.pdf