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P0770ETF Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P0770ETF Datasheet(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD. |
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1 / 4 page  1 F-16-5 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM REV 1.0 P0770ETF:TO-220F P0770ETFS:TO-220FS Halogen-Free & Lead-Free ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current 2 TC = 25 °C ID 7 A TC = 100 °C 4 Pulsed Drain Current 1 IDM 20 Avalanche Current 3 IAS 2.2 Avalanche Energy 3 EAS 24 mJ Power Dissipation TC = 25 °C PD 43 W TC = 100 °C 17 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.9 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3V DD = 50V , L = 10mH ,starting TJ = 25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 700 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 2.6 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Gate Voltage Drain Current IDSS VDS = 700V, VGS = 0V , TC = 25 °C 1 A VDS = 560V, VGS = 0V , TC = 100 °C 10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 1.4Ω 7A G D S 1. GATE 2. DRAIN 3. SOURCE |
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