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P0770ETFS Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P0770ETFS
Description  N-Channel Enhancement Mode
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P0770ETFS Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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2
F-16-5
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
REV 1.0
P0770ETF:TO-220F
P0770ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 3.5A
1.1
1.4
Ω
Forward Transconductance
1
gfs
VDS = 10V, ID = 3.5A
9
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
1185
pF
Output Capacitance
Coss
105
Reverse Transfer Capacitance
Crss
10
Total Gate Charge
2
Qg
VDD = 560V, ID =7A, VGS = 10V
30
nC
Gate-Source Charge
2
Qgs
5
Gate-Drain Charge
2
Qgd
9
Turn-On Delay Time
2
td(on)
VDD = 350V, ID =7A, RG= 25Ω
35
nS
Rise Time
2
tr
75
Turn-Off Delay Time
2
td(off)
80
Fall Time
2
tf
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
7
A
Forward Voltage
1
VSD
IF = 7A, VGS = 0V
1
V
Reverse Recovery Time
trr
IF = 7A, dlF/dt = 100A / S
404
nS
Reverse Recovery Charge
Qrr
3.8
uC
1Pulse test : Pulse Width
 380 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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