P1065ETFS datasheet(1/4 Pages) NIKOSEM

Part #	P1065ETFS

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1

G-16-2

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P1065ETF:TO-220F

P1065ETFS:TO-220FS

Halogen-Free & Lead-Free

ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

2

TC = 25 °C

ID

10

A

TC = 100 °C

6

Pulsed Drain Current

1

IDM

35

Avalanche Current

3

IAS

5

Avalanche Energy

3

EAS

125

mJ

Power Dissipation

TC = 25 °C

PD

48

W

TC = 100 °C

19

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

2.6

°C / W

Junction-to-Ambient

RJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

2Ensure that the channel temperature does not exceed 150°C.

3V

DD = 50V , L = 10mH ,starting TJ = 25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

650

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

2.8

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

650V

0.77Ω

10A

G

D

S

1. GATE

2. DRAIN

3. SOURCE

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P1065ETFS Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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