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P1820HDB Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P1820HDB Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() 2 G-5-3 N-Channel Enhancement Mode Field Effect Transistor P1820HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance 1 gfs VDS = 10V, ID = 9A 21 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 780 pF Output Capacitance Coss 132 Reverse Transfer Capacitance Crss 16 Total Gate Charge 2 Qg(VGS=10V) VDS = 160V , ID =18A 24 nC Qg(VGS=4.5V) 12 Gate-Source Charge 2 Qgs 3 Gate-Drain Charge 2 Qgd 8 Turn-On Delay Time 2 td(on) VDS = 100V , ID 18A, VGS = 10V, RGEN =25Ω 20 nS Rise Time 2 tr 135 Turn-Off Delay Time 2 td(off) 176 Fall Time 2 tf 128 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 18 A Forward Voltage 1 VSD IF = 18A, VGS = 0V 1 V Diode Reverse Recovery Time trr IF= 18A, dI/dt=100A/μs 122 nS Diode Reverse Recovery Charge Qrr 0.67 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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