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2SD1826 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1826 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1826 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 3.5A; VCE= 2V 2000 5000 fT Current-Gain—Bandwidth Product IC= 3.5A; VCE= 5V 20 MHz Switching Times ton Turn-on Time IC= 3A, IB1= -IB2= 6mA, VCC= 20V; RL= 6.7Ω 0.6 μ s tstg Storage Time 3.0 μ s tf Fall Time 1.7 μ s |
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