PD6B2BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.1

G-19-4

N-Channel Enhancement Mode

Field Effect Transistor

PD6B2BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.6

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100 nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 125 °C

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 4.5V, ID = 15A

5.7

mΩ

VGS = 10V , ID = 20A

4.7

6.2

Forward Transconductance

gfs

VDS = 5V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

992

Output Capacitance

Coss

189

Reverse Transfer Capacitance

Crss

122

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=10V)

VDS = 15V , ID = 20A

Qg(VGS=4.5V)

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

7.2

Turn-On Delay Time

td(on)

VDS = 15V

ID  20A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 20A, VGS = 0V

1.2

Reverse Recovery Time

trr

IF = 20A, dlF/dt = 100A / S

11.5

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 39A

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