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PD6D2BA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PD6D2BA
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PD6D2BA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV1.0
2
F-30-1
N-Channel Enhancement Mode
Field Effect Transistor
PD6D2BA
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Forward Transconductance
1
gfs
VDS = 5V, ID = 18A
32
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 20V, f = 1MHz
431
pF
Output Capacitance
Coss
58
Reverse Transfer Capacitance
Crss
36
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
3.9
Ω
Total Gate Charge
2
Qg(VGS=10V)
VDS = 20V , ID = 18A
10
nC
Qg(VGS=4.5V)
5.4
Gate-Source Charge
2
Qgs
1.2
Gate-Drain Charge
2
Qgd
3.1
Turn-On Delay Time
2
td(on)
VDS = 20V
ID  18A, VGS = 10V, RGEN =6Ω
10
nS
Rise Time
2
tr
40
Turn-Off Delay Time
2
td(off)
57
Fall Time
2
tf
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
18
A
Forward Voltage
1
VSD
IF = 18A, VGS = 0V
1.3
V
Reverse Recovery Time
trr
IF = 18A, dlF/dt = 100A / S
9.6
nS
Reverse Recovery Charge
Qrr
2.4
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Package limitation current is 15A



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