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PD600BA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PD600BA
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PD600BA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.0
2
D-52-2
N-Channel Enhancement Mode
Field Effect Transistor
PD600BA
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Forward Transconductance
1
gfs
VDS = 5V, ID = 20A
63
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 15V, f = 1MHz
617
pF
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
84
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
2.5
Ω
Total Gate Charge
2
Qg
VGS = 10 V，
VDS = 15V , ID = 20A
14
nC
Gate-Source Charge
2
Qgs
1.5
Gate-Drain Charge
2
Qgd
3.7
Turn-On Delay Time
2
td(on)
VDS = 15V
ID  20A, VGS = 10V, RGEN =6Ω
17
nS
Rise Time
2
tr
41
Turn-Off Delay Time
2
td(off)
55
Fall Time
2
tf
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
29
A
Forward Voltage
1
VSD
IF = 20A, VGS = 0V
1.1
V
Reverse Recovery Time
trr
IF = 20A, dlF/dt = 100A / S
10
nS
Reverse Recovery Charge
Qrr
3
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Package limitation current is 28A



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