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PD606BA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PD606BA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 1.1 2 E-23-4 N-Channel Enhancement Mode Field Effect Transistor PD606BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance 1 gfs VDS = 5V, ID = 7A 33 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 328 pF Output Capacitance Coss 64 Reverse Transfer Capacitance Crss 42 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3 Ω Total Gate Charge 2 Qg VGS = 10 V, VDS = 15V , ID = 7A 7.6 nC Gate-Source Charge 2 Qgs 1.1 Gate-Drain Charge 2 Qgd 2.5 Turn-On Delay Time 2 td(on) VDS = 15V ID 7A, VGS = 10V, RGEN =6Ω 19 nS Rise Time 2 tr 18 Turn-Off Delay Time 2 td(off) 39 Fall Time 2 tf 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 17 A Forward Voltage 1 VSD IF = 7A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 7A, dlF/dt = 100A / S 8.4 nS Reverse Recovery Charge Qrr 2.2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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