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PD632BA Datasheet(PDF) 3 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PD632BA Datasheet(HTML) 3 Page - NIKO SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() REV1.1 3 G-36-5 N-Channel Enhancement Mode Field Effect Transistor PD632BA TO-252 Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 8 16 24 32 40 012345 25℃ 150℃ 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 Output Characteristics Transfer Characteristics VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics 25℃ 125℃ ‐20℃ 0 8 16 24 32 40 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V VGS=2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0 2 4 6 8 10 0 9 18 27 36 45 VDS=15V ID=20A |
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