PE628BA datasheet(1/4 Pages) NIKOSEM

Part #	PE628BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV1.0

1

D-42-1

N-Channel Enhancement Mode

Field Effect Transistor

PE628BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

3

30V

14mΩ

27A

G

D

S

G

S

#1

D

D D

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TC = 25 °C

ID

27

A

TC = 100 °C

17

TA = 25 °C

8

TA = 70 °C

6

Pulsed Drain Current

1

IDM

66

Avalanche Current

IAS

14.7

Avalanche Energy

L = 0.1mH

EAS

10.8

mJ

Power Dissipation

TC = 25 °C

PD

18

W

TC = 100 °C

7

TA = 25 °C

1.7

TA = 70 °C

1.1

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

71.5

°C / W

Junction-to-Case

RJC

6.8

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3Package limitation current is 11A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.7

2.3

G : GATE

D : DRAIN

S : SOURCE

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PE628BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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