FS4435 datasheet(4/6 Pages) FORTUNE

4 / 6 page

FS4435

Rev. 1.5

4/6

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

Max.

℃/W

Electrical Characteristics

Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

-30

RDS(ON)

Static Drain-Source On-Resistance

VGS = -10V, ID = -10A

mΩ

VGS = -5V, ID = -5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250uA

-1

-1.7

-3

IDSS

Drain-Source Leakage Current (Tj = 25℃)

VDS =-30V VGS = 0V

-1

Drain-Source Leakage Current (Tj = 55℃)

VDS =-30V VGS = 0V

-5

IGSS

Gate-Source Leakage

VGS = ±25V VDS =0V

±100

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A,VGS=0V

-0.75

-1.0

trr

Reverse Recovery Time

ISD=-10A,dISD/dt=100A/

μs

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=VDS=0V,F=1MHz

5.8

Ciss

Input Capacitance

VGS=0V,VDS=-15V

Frequency=1MHz

1130

1400

Coss

Output Capacitance

240

Crss

Reverse Transfer Capacitance

155

td(on)

Turn-on Delay Time

VGS=-10V,VDS=-15V,

RG=3Ω,RL=1.5Ω,

8.7

Turn-on Rise Time

8.5

td(off)

Turn-off Delay Time

Turn-off Rise Time

Gate Charge Characteristics

Qg(10V)

Total Gate Charge

VGS=-10V,VDS=-15V,

IDS=-11A

Qg(4.5V)

Total Gate Charge

9.5

Qgs

Gate-Source Charge

5.5

Qgd

Gate-Drain Charge

3.3

Notes：

Pulse width ≦ 300us, duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing

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