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SLH60R042SS Datasheet(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

Part # SLH60R042SS
Description  600V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  MAPLESMI [Shenzhen Meipusen Semiconductor Co., Ltd]
Direct Link  http://www.meipusen.com/
Logo MAPLESMI - Shenzhen Meipusen Semiconductor Co., Ltd

SLH60R042SS Datasheet(HTML) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V,ID = 250uA, TJ=25℃
600
-
-
V
VGS = 0V,ID = 250uA, TJ=150℃
-650
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25°C
-
0.6
-
V/°C
IDSS
Drain-Source Leakage Current
VDS =600V, VGS = 0V
-
-
1
uA
VDS =480V, TC = 125 °C
-
10
-
uA
IGSS
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
3.0
4.0
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS =10 V, ID = 28A
-
36
42
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
VGS=0 V,VDS =25V,f = 1MHz
-
6018
-
pF
Coss
Output Capacitance
-
245
-
Crss
Reverse Transfer Capacitance
-
33
-
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =300V, ID =40A, RG =25
Ω
`
48
-
nS
tr
Rise Time
-
114
-
td(off)
Turn-off Delay Time
-
179
-
tf
Fall Time
-
113
-
Qg
Total Gate Charge
VDS =480V, VGS =40V, ID =20A
-
142
-
nC
Qgs
Gate-Source Charge
-
39
-
Qgd
Gate-Drain Charge(Miller Charge)
-
59
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
76
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
-
-
226
VSD
Diode Forward Voltage
IS =40A, VGS =0V
-
-
1.5
V
trr
Reverse Recovery Time
IS =40A, VGS=0V, dIF/dt=100A/us
-
625
-
nS
Qrr
Reverse Recovery Charge
-
2.5
-
uC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =40mH, IAS =12A, VDD = 50V, RG = 25
Ω,Starting TJ = 25°C
3. ISD
≤ ID, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width
≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2017
Page2



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