SM7340EHKP datasheet(3/16 Pages) SINOPWER

3 / 16 page

SM7340EHKP

www.sinopowersemi.com

Rev. A.4 - December, 2017

Channel 1 Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Channel 1

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

BVDSSt

Drain-Source Breakdown Voltage

(transient)

VGS=0V, ID(aval)=35A

Tcase=25°C, ttransient=100ns

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.3

1.6

2.3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=15A

2.5

TJ=125°C

VGS=4.5V, IDS=12A

3.2

4.2

Gfs

Forward Transconductance

VDS=5V, IDS=15A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=15A, VGS=0V

0.78

1.1

trr

Reverse Recovery Time

ISD=15A, dlSD/dt=100A/ms

Vdd=15V

32.4

Charge Time

Discharge Time

16.4

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.2

Ciss

Input Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

1670

Coss

Output Capacitance

1140

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=1W

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=15A

Total Gate Charge

VDS=15V, VGS=10V,

IDS=15A

Qgth

Threshold Gate Charge

1.7

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

5.5

Note f：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note g：Guaranteed by design, not subject to production testin g.

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