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SPD9105W Datasheet(PDF) 2 Page - Will Semiconductor Ltd. |
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SPD9105W Datasheet(HTML) 2 Page - Will Semiconductor Ltd. |
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2 / 5 page ![]() SPD9105W Will Semiconductor Ltd. 2 Revision 1.1, 2014/11/24 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) 1) According to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20 μs) Ppk 360 W Peak pulse current (tp = 8/20 μs) IPP 20 A ESD according to IEC61000-4-2 air discharge VESD ±30 kV ESD according to IEC61000-4-2 contact discharge ±30 Junction temperature TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC Storage temperature TSTG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage VRWM 5 V Reverse leakage current IR VRWM = 5V 0.1 100 nA Reverse breakdown voltage VBR IT = 1mA 5.6 V Clamping voltage 1) VCL IPP = 1A, tp = 8/20μs 9 V IPP = 5A, tp = 8/20μs 11 V IPP = 20A, tp = 8/20μs 18 V Junction capacitance CJ VR = 0V, f = 1MHz I/O to I/O 1.0 1.5 pF |
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