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MUR205TG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # MUR205TG
Description  Glass Passivated Silicon Rectifier
PDF  2 Pages
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Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

MUR205TG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

  MUR205TG Datasheet HTML 1Page - Shenzhen Foster Semiconductor Co., Ltd. MUR205TG Datasheet HTML 2Page - Shenzhen Foster Semiconductor Co., Ltd.  
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background image
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-15
: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Lead
Weight : Approximated 0.40 gram
High current capability.
High surge current capability.
Glass passivated chip junction structure.
Axial lead type devices for through hole design
Lead-free parts meet RoHS requirments.
• Superfast recovery time for switching mode application.
Maximum ratings (AT T =25
A
oC unless otherwise noted)
MUR205TG
MUR210TG
MUR215TG
50
100
150
35
70
105
SYMBOLS
V
RRM
(V)
V
RMS
V
R
(V)
(V)
*1
*2
*3
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I =2.0A
*5 Reverse recovery time
F
, note 1
V
F
(V)
*4
MUR230TG
MUR240TG
300
400
210
280
1.25
-55 to +150
MUR250TG
MUR260TG
500
600
350
420
T
RR
(nS)
*5
35
50
100
150
300
400
500
600
0.95
1.70
MUR220TG
200
140
200
(C)
O
Operating
temperature
T,
J
Note 1. Reverse recovery time test condition, I =0.5A, I =1.0A, I
=0.25A
FRRR
MUR205TG THRU MUR260TG
Glass Passivated Silicon Rectifier
2.0A Leaded Type Super
Fast Rectifiers - 50-600V
Features
Mechanical data
DO-15
Package outline
Dimensions in inches and (millimeters)
@ 2018 Copyright By American First Semiconductor
REV:1.0
Page 1/2
0.140(3.6)
0.104(2.6)
DIA.
0.034(0.9)
0.023(0.6)
DIA.
1.0 (25.4)
MIN.
0.300(7.6)
0.230(5.8)
1.0 (25.4)
MIN.
PARAMETER
CONDITIONS
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
O
Ambient temperature = 50 C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
f=1MHz and applied 4V DC reverse voltage
Symbol
MIN.
TYP.
MAX.
UNIT
I
O
I
FSM
I
R
R
θJA
C
J
T
STG
A
A
µA
OC/W
OC
pF
2.0
50
10
+150
-55
50
O
V
= V
T = 25 C
R
RRM
J
O
V
= V
T = 100 C
R
RRM
J
Junction to ambient
60
100


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