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PRM4R9N10CT Datasheet(PDF) 1 Page - PFC Device Inc. |
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PRM4R9N10CT Datasheet(HTML) 1 Page - PFC Device Inc. |
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1 / 8 page  100V Single N-Channel MOSFET Apr-2018 Version 4.3 1 / 8 PFC Device Corporation PRM4R9N10CT www.pfc-device.com Major ratings and characteristics Characteristics Values Units VDS 100 V ID 5 (T C=25℃) 110 A Max. RDS(ON)@VGS=10V 4.9 mΩ Ω Ω Ω TJ Operating Junction Temperature -55 to +150 oC General Description The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. Typical Applications Charger Adapter Power Tools LED Lighting Features Max. RDS(ON)=4.9mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available PRM4R9N10CT TO-220 TO-220AB G D S |
Similar Part No. - PRM4R9N10CT |
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Similar Description - PRM4R9N10CT |
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