Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

PRM4R9N10CTF Datasheet(PDF) 3 Page - PFC Device Inc.

Part # PRM4R9N10CTF
Description  100V Single N-Channel MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PFC [PFC Device Inc.]
Direct Link  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM4R9N10CTF Datasheet(HTML) 3 Page - PFC Device Inc.

  PRM4R9N10CTF Datasheet HTML 1Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 2Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 3Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 4Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 5Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 6Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 7Page - PFC Device Inc. PRM4R9N10CTF Datasheet HTML 8Page - PFC Device Inc.  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
Characteristics
Version 4.1
3 / 8
www.pfc-device.com
PRM4R9N10CTF
Electrical Characteristics
( TJ = 25
oC unless otherwise specified )
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
---
---
V
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V, TJ=25
℃
---
---
1
uA
VDS=100V, VGS=0V, TJ=125
℃
---
---
250
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance V
GS=10V, ID=20A
---
---
4.9
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=250uA
2.0
---
4.0
V
gfs
Forward Transconductance
VDS=5V, ID=20A
---
60
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge
3, 4
VDS=50V, VGS=10V, ID=20A
---
70
---
nC
Qgs
Gate-Source Charge
3, 4
---
23.5
---
Qgd
Gate-Drain Charge
3, 4
---
11
---
Td(on)
Turn-On Delay Time
3, 4
VDD=50V, VGS=10V, RG=6Ω
ID=20A
---
30
---
ns
Tr
Turn-On Rise Time
3, 4
---
69
---
Td(off)
Turn-Off Delay Time
3, 4
---
44
---
Tf
Turn-Off Fall Time
3, 4
---
43
---
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=1MHz
---
5100
---
pF
Coss
Output Capacitance
---
400
---
Crss
Reverse Transfer Capacitance
---
25
---
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
---
0.4
---
Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
VGS=0V, IS=20A
---
---
1.5
V
trr
Reverse Recovery Time
IS=20A, di/dt=100A/us
---
73
---
ns
Qrr
Reverse Recovery Charge
---
150
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V, VGS=10V, L=0.4mH, IAS=35A, RG=25Ω,Starting TJ=25℃
3.
The data tested by pulsed , pulse width
≦300us, duty cycle ≦2%.
4.
Essentially independent of operating temperature.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com