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SM2011PSKP Datasheet(PDF) 4 Page - Sinopower Semiconductor Inc |
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SM2011PSKP Datasheet(HTML) 4 Page - Sinopower Semiconductor Inc |
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4 / 10 page ![]() www.sinopowersemi.com 4 SM2011PSKP Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2017 ® Typical Operating Characteristics Drain Current T j - Junction Temperature (°C) Safe Operation Area -V DS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation T j - Junction Temperature (°C) 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 T C=25 oC 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 T C=25 oC,V G=-10V 0.01 0.1 1 10 100 1 10 100 600 300ms 100ms 10ms 1ms DC T C=25 oC 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 1 2 R qJC :1.2 oC/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 |
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