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BC237 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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BC237 Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 3 page  BC237/238/239 NPN Epitaxial Silicon Transistor www.artschip.com 1 Switching and Amplifier Applications .Low Noise:BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 ℃ unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage :BC237 :BC238/239 50 30 V V VCEO Collector-Emitter Voltage :BC237 :BC238/239 45 25 V V VEBO Emitter-Base Voltage :BC237 :BC238/239 6 5 V V Ic Collector Current(DC) 100 mA Pc Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55~150 ℃ Electrical Characteristics Ta=25 ℃ unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown :BC237 :BC238/239 IC=2mA, IB=0 45 25 V V BVEBO Emitter Base Breakdown Voltage :BC237 :BC238/239 IE=1µA, Ic=0 6 5 V V ICES Collector Cut-off Current :BC237 :BC238/239 VCE=50V, VBE=0 VCE=30V, VBE=0 0.2 0.2 15 15 nA nA hFE DC Current Gain VCE=5V, Ic=2mA 120 800 VCE(sat) Collector-Emitter Saturation Voltage Ic=10mA, IB=0.5mA Ic=100mA, IB=5mA 0.07 0.2 0.2 0.6 V V VBE(sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 0.73 0.87 0.83 1.05 V V VBE(on) Base-Emitter On Voltage VCE=5V,Ic=2mA 0.55 0.62 0.7 V fT Current Gain Bandwidth Product VCE=3V, Ic=0.5mA, f=100MHz VCE=5V, Ic=10mA, f=100MHz 150 85 250 MHz MHz Cob Output Capacitance VCB=10V, IE=0,f=1MHz 3.5 6 pF Cib Input Base Capacitance VEB=0.5V, IC=0,f=1MHz 8 pF NF Noise Figure :BC237/238 :BC239 :BC239 VCE=5V, IC=0.2mA, F=1KHz, RG=2k Ω VCE=5V, Ic=0.2mA RG=2k Ω, f=30-15kHz 2 10 4 4 dB dB dB hFE Classification Classification A B C hFE 120~220 180~460 380~800 |
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Similar Description - BC237 |
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