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PRM034N06E Datasheet(PDF) 3 Page - PFC Device Inc.

Part # PRM034N06E
Description  60V Single N-Channel MOSFET
PDF  8 Pages
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Manufacturer  PFC [PFC Device Inc.]
Direct Link  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM034N06E Datasheet(HTML) 3 Page - PFC Device Inc.

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Characteristics
Version 4.2
3 / 8
www.pfc-device.com
PRM034N06E
Electrical Characteristics
( TJ = 25
oC unless otherwise specified )
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
---
---
V
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V, TJ=25℃
---
---
1
uA
VDS=60V,VGS=0V, TJ=125℃
---
---
250
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=10A
---
28
34
m
VGS=4.5V , ID=5A
---
33
40
m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.7
3.0
V
gfs
Forward Transconductance
VDS=5V , ID=10A
---
29
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge
3 , 4
VDS=30V , VGS=10V , ID=20A
---
19.5
---
nC
Qgs
Gate-Source Charge
3 , 4
---
5.7
---
Qgd
Gate-Drain Charge
3 , 4
---
2.1
---
Td(on)
Turn-On Delay Time
3 , 4
VDD=30V , VGS=10V , RG=6
ID=20A
---
7
---
ns
Tr
Turn-On Rise Time
3 , 4
---
32
---
Td(off)
Turn-Off Delay Time
3 , 4
---
19
---
Tf
Turn-Off Fall Time
3 , 4
---
43
---
Ciss
Input Capacitance
VDS=25V , VGS=0V , f=1MHz
---
1180
---
pF
Coss
Output Capacitance
---
68
---
Crss
Reverse Transfer Capacitance
---
45
---
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
---
1.8
---
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
VGS=0V ,IS=20A
---
---
1.5
V
trr
Reverse Recovery Time
IS=20A, di/dt=100A/us
---
9
---
ns
Qrr
Reverse Recovery Charge
---
2
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=15A, RG=25,Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.



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