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SM2425PSAN Datasheet(PDF) 2 Page - Sinopower Semiconductor Inc |
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SM2425PSAN Datasheet(HTML) 2 Page - Sinopower Semiconductor Inc |
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2 / 12 page ![]() www.sinopowersemi.com 2 SM2425PSAN Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - October, 2014 ® Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 V T A=25°C -3.7 ID a Continuous Drain Current (VGS=-10V) T A=70°C -3.0 I DM a Pulsed Drain Current (V GS=-10V) -14.8 I S a Diode Continuous Forward Current -1 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 °C TA=25°C 1.32 PD a Maximum Power Dissipation TA=70°C 0.84 W t ≤ 10s 95 RθJA a Thermal Resistance-Junction to Ambient Steady State 135 °C/W I AS Avalanche Current, Single pulse L=0.5mH -7 A EAS Avalanche Energy, Single pulse L=0.5mH 12.25 mJ Note a:Surface Mounted on 1in 2 pad area, t ≤ 10sec. |
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