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DAM2N650C Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM2N650C Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 650V RDS(ON) Typ.7.5Ω @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage VDS 650 V Gate Source Voltage VGS ±30 V Drain Current Continuous @ TC = 25°C ID 2 A @ TC = 100°C 1.3 Drain Current Pulsed@ TC = 25°C IDM 8 A Single Pulse Avalanche Energy EAS 9 mJ Single Pulse Avalanche Current IAS 2.5 A Maximum Power Dissipation PD 46 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJC 2.7 °C/W DAM2N650C Note3 (Tc=25°C unless otherwise noted) |
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