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DAM3N600C Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM3N600C Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 600V RDS(ON) Typ.3.6Ω @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage VDS 600 V Gate Source Voltage VGS ±30 V Drain Current Continuous @ TC = 25°C ID 3 A @ TC = 100°C 1.9 Drain Current Pulsed@ TC = 25°C IDM 12 A Single Pulse Avalanche Energy EAS 65 mJ Single Pulse Avalanche Current IAS 3.6 A Maximum Power Dissipation PD 60 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJC 2.1 °C/W DAM3N600C Note3 (Tc=25°C unless otherwise noted) |
Similar Part No. - DAM3N600C |
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Similar Description - DAM3N600C |
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