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DAM70N60C Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM70N60C Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 60V RDS(ON) Typ.6.8mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 60 V Gate Source Voltage VGS ±25 V Drain Current Continuous @ TC = 25°C ID 70 A @ TC = 100°C 44 Drain Current Pulsed@ TC = 25°C IDM 280 A Single Pulse Avalanche Energy EAS 238 mJ Single Pulse Avalanche Current IAS 69 A Maximum Power Dissipation PD 113 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJC 1.1 °C/W DAM70N60C Note3 |
Similar Part No. - DAM70N60C |
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Similar Description - DAM70N60C |
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