2SC2001 datasheet(1/2 Pages) KOOCHIN

Part #	2SC2001

Description	TRANSISTOR (NPN)

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Manufacturer	KOOCHIN [SHENZHEN KOO CHIN ELECTRONICS CO., LTD.]

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2SC2001

TRANSISTOR (NPN)

FEATURES

High hFE and low VCE(sat)

hFE(IC=100mA) : 200(Typ)

VCE(sat)(700mA): 0.2V (Typ)

MAXIMUM RATINGS(TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

700

mA

PC

Collector Power Dissipation

600

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA ,

IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=30 V, IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=20 V, IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5 V, IC=0

0.1

µA

DC current gain

hFE

VCE=1V, IC=100mA

90

400

Collector-emitter saturation voltage

VCE(sat)

IC=700mA, IB= 70mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC= 700mA, IB=70mA

1.2

V

Transition frequency

f T

VCE=6V, IC= 10mA

f = 30MHz

50

MHz

CLASSIFICATION OF hFE

Rank

M

L

K

Range

90-180

135-270

200-400

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

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2SC2001 Datasheet(PDF) 1 Page - SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

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