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DAM10N600F Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM10N600F Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 600V RDS(ON) Typ.0.56Ω @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 600 V Gate Source Voltage VGS ±30 V Drain Current Continuous @ Tc = 25°C ID 10 A @ Tc = 100°C 6.3 Drain Current Pulsed@ TC = 25°C IDM 40 A Single Pulse Avalanche Energy EAS 720 mJ Single Pulse Avalanche Current IAS 12 A Maximum Power Dissipation PD 44.6 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case R θJc 2.8 °C/W Aug.2017 DAM10N600F Note3 |
Similar Part No. - DAM10N600F |
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