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EMB20P03VAT Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMB20P03VAT Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2015/4/22 p.4 EMB20P03VAT Normalized on‐Resistance v.s. Junction Temperature T ‐ Junction Temperature (°C) 50 1.2 0.6 ‐50 0.8 1.0 J ‐25 0 25 D I = ‐5A V = ‐4.5V 1.4 1.6 1.8 GS 150 100 75 125 Body Diode Forward Voltage Variation with Source Current and Temperature T = 125°C ‐V ‐ Body Diode Forward Voltage( V ) 0.6 0.001 0 0.01 0.1 SD 0.2 0.4 25°C V = 0V 1 10 100 GS A 0.8 1.0 ‐55°C 1.2 ‐V ‐ Drain‐Source Voltage( V ) 0 0 5 0.5 DS 20 10 15 ‐6.0V ‐5.0V 11.5 2 ‐8.0V ‐7.0V V = ‐10 V GS Typical output characteristics ‐4.5V 2.5 Q ‐ Gate Charge( nC ) Gate Charge Characteristics 0 0 2 4 g 5 10 I = ‐ 5A 6 8 10 D 20 15 25 ‐ 15V DS V = ‐ 5V ‐ 10V T = 125°C ‐ V ‐ Gate‐Source Voltage( V ) 2 0.01 0 0.02 4 GS T = 25°C A A 0.05 0.03 0.04 0.06 8 610 I = ‐4A D On‐Resistance Variation with Gate‐Source Voltage ‐ V , Drain‐Source Voltage( V ) 0 0 400 800 DS 5 10 Coss Crss 1200 1600 2000 Ciss 25 15 20 30 GS f = 1 MHz V = 0 V Capacitance Characteristics TYPICAL CHARACTERISTICS |
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